| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
 |
Metelics (MACOM Technology Solutions) |
HMIC SINGLE POLE 5 THROW SWITCH |
100 |
|
|
Metelics (MACOM Technology Solutions) |
IC RF SWITCH SP5T 26GHZ |
0 |
|
|
NARROW BAND LOW POWER AMPLIFIER, |
312500 |
|
|
|
Renesas Electronics America |
VFQFPN 4.00X4.00X0.90 MM, 0.65MM |
0 |
|
|
Metelics (MACOM Technology Solutions) |
4T SWITCH W/BIASNETWORK |
0 |
|
|
IR (Infineon Technologies) |
CMOS SWITCH |
0 |
|
|
IR (Infineon Technologies) |
ANTENNA DEVICES |
0 |
|
|
Analog Devices, Inc. |
IC RF SWITCH SPDT 50GHZ DIE |
25 |
|
|
IR (Infineon Technologies) |
ANTENNA DEVICES |
0 |
|
|
MITEQ, Inc.（L3 Narda-MITEQ） |
PIN SWITCH SP2T 2-18 GHZ |
3 |
|
|
Hirose |
CONN RF COAX SWITCH |
0 |
|
|
IR (Infineon Technologies) |
IC RF SWITCH SP8T ATSLP12-10 |
0 |
|
|
New Japan Radio (NJR) |
HIGH POWER SPDT SWITCH GAAS MMIC |
0 |
|
|
Metelics (MACOM Technology Solutions) |
SAMPLE BOARD ASSY,DC-3.0 GHZ,SC7 |
5 |
|
|
Panasonic |
IC RF SWITCH SPDT 18GHZ |
0 |
|
|
Roving Networks / Microchip Technology |
MMIC, SPDT, DC-20GHZ; QFN PKG |
0 |
|
|
Skyworks Solutions, Inc. |
DIVERSITY CARRIER AGGREGATION |
11480 |
|
|
IR (Infineon Technologies) |
IC RF SWITCH SP4T TSLP10-2 |
7388 |
|
|
Hirose |
CONN RF COAX SWITCH |
0 |
|
|
Renesas Electronics America |
VFQFPN 4.00X4.00X0.75 MM, 0.50MM |
0 |
|
RF (Radio Frequency) and IF (Intermediate Frequency) switches are critical components in wireless communication systems, enabling signal routing between transmitter, receiver, and antenna. RFID (Radio Frequency Identification) RF switches specifically manage signal paths in RFID readers and tags. These electromechanical or solid-state devices operate in frequency ranges from kHz to GHz, playing vital roles in 5G, IoT, and industrial automation.
| Type | Functional Characteristics | Application Examples |
|---|---|---|
| Electromechanical Switches | High isolation (>85dB), low insertion loss (<0.5dB), limited lifespan (107 cycles) | Lab test equipment, fixed wireless systems |
| Solid-State Switches | Fast switching speed (<20ns), 50 impedance, moderate power handling (30dBm) | 5G base stations, software-defined radios |
| MEMS Switches | Ultra-low insertion loss (0.2dB), high linearity, vacuum encapsulation | Aerospace phased arrays, medical imaging |
| RFID Antenna Switches | Impedance matching networks, HF/UHF band optimization | Smart logistics, access control systems |
Typical RF switches consist of: - Housing: Aluminum alloy or ceramic packages - Contact system: Gold-plated beryllium copper contacts - Actuator: Electromagnetic coil or MEMS membrane - RF ports: SMA/N-type connectors or surface-mount pads - Dielectric materials: PTFE or ceramic insulators
| Parameter | Typical Values | Importance |
|---|---|---|
| Frequency Range | DC-18GHz (standard) | Determines application bandwidth |
| Insertion Loss | 0.3-2.0 dB | Affects signal strength |
| Isolation | 40-100 dB | Prevents signal interference |
| Power Handling | 10W-100W | Limits maximum operational power |
| Switching Speed | 5ms-50ns | Impacts system response time |
| Manufacturer | Representative Product | Key Features |
|---|---|---|
| Keysight Technologies | U1880A | 67GHz bandwidth, 500ns switching speed |
| Analog Devices | ADG904 | 4-channel, 3GHz, CMOS process |
| STMicroelectronics | AFBR-5010 | MEMS-based, 0.15dB insertion loss |
| Infineon | BTS724G | Automotive-grade, 40V load protection |
Key considerations: - Frequency matching with system requirements - Power handling capacity with 20% safety margin - Environmental factors (temperature, vibration) - Lifecycle requirements (electromechanical vs. solid-state) - Cost vs. performance trade-offs
Future developments include: - Millimeter-wave switches for 5G/6G (28-100GHz) - Integrated passive devices (IPDs) with embedded switches - Energy-harvesting RFID switch solutions - AI-driven smart switch arrays for dynamic spectrum sharing - Nano-MEMS technology achieving sub-10ns switching