| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
 |
IR (Infineon Technologies) |
BGSX22G2 - RF ANTENNA CROSS SWIT |
8713 |
|
 |
Tagore Technology |
IC RF SWITCH SP4T 3GHZ 16QFN |
0 |
|
 |
Metelics (MACOM Technology Solutions) |
IC RF SWITCH SPDT 50GHZ DIE |
100 |
|
 |
Panasonic |
ARD COAXIAL SWITCH |
0 |
|
 |
Panasonic |
IC RF SWITCH SPDT 18GHZ |
0 |
|
 |
Panasonic |
IC RF SWITCH SPDT 26.5GHZ MODULE |
0 |
|
 |
Analog Devices, Inc. |
IC RF SWITCH SP4T 8GHZ 16QFN |
602 |
|
 |
Analog Devices, Inc. |
IC RF SWITCH SP4T 20GHZ 24SMT |
1596 |
|
 |
Metelics (MACOM Technology Solutions) |
IC RF SWITCH SP4T 3GHZ 16QFN |
2187 |
|
 |
Panasonic |
IC RF SWITCH 26.5GHZ ARD COAX |
0 |
|
 |
Analog Devices, Inc. |
IC TRANSFER SWITCH 8GHZ 16QFN |
0 |
|
 |
Analog Devices, Inc. |
IC RF SWITCH 3GHZ 24QFN |
674 |
|
 |
Skyworks Solutions, Inc. |
LOW INSERTION LOSS ANTENNA SWAP |
844 |
|
 |
Analog Devices, Inc. |
IC RF SWITCH SPDT 13GHZ 16LFCSP |
7024 |
|
 |
New Japan Radio (NJR) |
HIGH POWERSP4T SWITCH GAAS MMIC |
3514 |
|
 |
Metelics (MACOM Technology Solutions) |
FINAL ASSY, SWITCH, SP2T, |
0 |
|
|
Renesas Electronics America |
VFQFPN 4.00X4.00X0.75 MM, 0.50MM |
0 |
|
|
Skyworks Solutions, Inc. |
IC RF SWITCH SP8T HB+SP6T LB DIV |
0 |
|
|
Radiall USA, Inc. |
SP2 R S18 LSI 28 TL D P |
10 |
|
|
Analog Devices, Inc. |
ADG901BCPZ-500RL7 REEL |
0 |
|
RF (Radio Frequency) and IF (Intermediate Frequency) switches are critical components in wireless communication systems, enabling signal routing between transmitter, receiver, and antenna. RFID (Radio Frequency Identification) RF switches specifically manage signal paths in RFID readers and tags. These electromechanical or solid-state devices operate in frequency ranges from kHz to GHz, playing vital roles in 5G, IoT, and industrial automation.
| Type | Functional Characteristics | Application Examples |
|---|---|---|
| Electromechanical Switches | High isolation (>85dB), low insertion loss (<0.5dB), limited lifespan (107 cycles) | Lab test equipment, fixed wireless systems |
| Solid-State Switches | Fast switching speed (<20ns), 50 impedance, moderate power handling (30dBm) | 5G base stations, software-defined radios |
| MEMS Switches | Ultra-low insertion loss (0.2dB), high linearity, vacuum encapsulation | Aerospace phased arrays, medical imaging |
| RFID Antenna Switches | Impedance matching networks, HF/UHF band optimization | Smart logistics, access control systems |
Typical RF switches consist of: - Housing: Aluminum alloy or ceramic packages - Contact system: Gold-plated beryllium copper contacts - Actuator: Electromagnetic coil or MEMS membrane - RF ports: SMA/N-type connectors or surface-mount pads - Dielectric materials: PTFE or ceramic insulators
| Parameter | Typical Values | Importance |
|---|---|---|
| Frequency Range | DC-18GHz (standard) | Determines application bandwidth |
| Insertion Loss | 0.3-2.0 dB | Affects signal strength |
| Isolation | 40-100 dB | Prevents signal interference |
| Power Handling | 10W-100W | Limits maximum operational power |
| Switching Speed | 5ms-50ns | Impacts system response time |
| Manufacturer | Representative Product | Key Features |
|---|---|---|
| Keysight Technologies | U1880A | 67GHz bandwidth, 500ns switching speed |
| Analog Devices | ADG904 | 4-channel, 3GHz, CMOS process |
| STMicroelectronics | AFBR-5010 | MEMS-based, 0.15dB insertion loss |
| Infineon | BTS724G | Automotive-grade, 40V load protection |
Key considerations: - Frequency matching with system requirements - Power handling capacity with 20% safety margin - Environmental factors (temperature, vibration) - Lifecycle requirements (electromechanical vs. solid-state) - Cost vs. performance trade-offs
Future developments include: - Millimeter-wave switches for 5G/6G (28-100GHz) - Integrated passive devices (IPDs) with embedded switches - Energy-harvesting RFID switch solutions - AI-driven smart switch arrays for dynamic spectrum sharing - Nano-MEMS technology achieving sub-10ns switching