SI7960DP-T1-E3

Manufacturer Part SI7960DP-T1-E3
Manufacturer Vishay / Siliconix
Description MOSFET 2N-CH 60V 6.2A PPAK SO-8
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SI7960DP-T1-E3 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 23 - Nov 27 2024
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Product Attributes
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:6.2A
Rds On (Max) @ Id, Vgs:21mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:1.4W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SO-8 Dual
Supplier Device Package:PowerPAK® SO-8 Dual
More Information
SI7960DP-T1-E3
SI7960DP-T1-E3
Vishay / Siliconix SI7960DP-T1-E3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SI7960DP-T1-E3 PDF
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