Manufacturer Part | SI7956DP-T1-GE3 |
---|---|
Manufacturer | Vishay / Siliconix |
Description | MOSFET 2N-CH 150V 2.6A PPAK SO-8 |
Category | Discrete Semiconductor |
RoHS | Lead free / RoHS Compliant |
Warranty | 365 days |
Datasheet | SI7956DP-T1-GE3 PDF |
Availability | 6935 pieces |
Shipped from | HK warehouse |
Expected Shipping | Dec 19 - Dec 23 2024 |
In Stock Min.: 1 Mult.: 1
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Type | Description |
---|---|
Series: | TrenchFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 150V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A |
Rds On (Max) @ Id, Vgs: | 105mOhm @ 4.1A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Power - Max: | 1.4W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SO-8 Dual |
Supplier Device Package: | PowerPAK® SO-8 Dual |
Payment method | Hand Fee |
Telegraphic Transfer | Request service |
Paypal | 4% fee |
Credit Card | 4% fee |
Western Union | Free of charge |
Money Gram | Free of charge |
Shipping Type | Lead Time |
DHL | 2-5 days |
Fedex | 2-5 days |
UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Registered Air Mail | 20-35 days |