GT30J341,Q

Manufacturer Part GT30J341,Q
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description IGBT TRANS 600V 30A TO3PN
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 23 - Dec 27 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tray
Part Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):59 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 30A
Power - Max:230 W
Switching Energy:800µJ (on), 600µJ (off)
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:80ns/280ns
Test Condition:300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr):50 ns
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3P(N)
More Information
GT30J341,Q
GT30J341,Q
Toshiba Electronic Devices and Storage Corporation GT30J341,Q is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Same Series
GT30J121(Q)
GT30J121(Q)
IGBT 600V 30A 170W TO3PN
Toshiba Electronic Devices and Storage Corporation
GT30J341,Q
GT30J341,Q
IGBT TRANS 600V 30A TO3PN
Toshiba Electronic Devices and Storage Corporation
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