GT30J121(Q)

Manufacturer Part GT30J121(Q)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description IGBT 600V 30A 170W TO3PN
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 19 - Dec 23 2024
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Product Attributes
Type Description
Series:*
Package:Tube
Part Status:Active
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):30 A
Current - Collector Pulsed (Icm):60 A
Vce(on) (Max) @ Vge, Ic:2.45V @ 15V, 30A
Power - Max:170 W
Switching Energy:1mJ (on), 800µJ (off)
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:90ns/300ns
Test Condition:300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr):-
Operating Temperature:-
Mounting Type:Through Hole
Package / Case:TO-3P-3, SC-65-3
Supplier Device Package:TO-3P(N)
More Information
GT30J121(Q)
GT30J121(Q)
Toshiba Electronic Devices and Storage Corporation GT30J121(Q) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Same Series
GT30J121(Q)
GT30J121(Q)
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