BSM120D12P2C005

Manufacturer Part BSM120D12P2C005
Manufacturer ROHM Semiconductor
Description MOSFET 2N-CH 1200V 120A MODULE
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet BSM120D12P2C005 PDF
Availability 33 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:2.7V @ 22mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:14000pF @ 10V
Power - Max:780W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:-
Package / Case:Module
Supplier Device Package:Module
More Information
BSM120D12P2C005
BSM120D12P2C005
ROHM Semiconductor BSM120D12P2C005 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
BSM120D12P2C005 PDF
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