BSM180D12P3C007

Manufacturer Part BSM180D12P3C007
Manufacturer ROHM Semiconductor
Description SIC POWER MODULE
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet BSM180D12P3C007 PDF
Availability 11 pieces
Shipped from HK warehouse
Expected Shipping Feb 17 - Feb 21 2025
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:900pF @ 10V
Power - Max:880W
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Package / Case:Module
Supplier Device Package:Module
More Information
BSM180D12P3C007
BSM180D12P3C007
ROHM Semiconductor BSM180D12P3C007 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
BSM180D12P3C007 PDF
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