Manufacturer Part | SIHU6N80E-GE3 |
---|---|
Manufacturer | Vishay / Siliconix |
Description | MOSFET N-CH 800V 5.4A IPAK |
Category | Discrete Semiconductor |
RoHS | Lead free / RoHS Compliant |
Warranty | 365 days |
Datasheet | SIHU6N80E-GE3 PDF |
Availability | 2992 pieces |
Shipped from | HK warehouse |
Expected Shipping | Nov 26 - Nov 30 2024 |
In Stock Min.: 1 Mult.: 1
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Type | Description |
---|---|
Series: | E |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800 V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 940mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 44 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 827 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 78W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | IPAK (TO-251) |
Package / Case: | TO-251-3 Long Leads, IPak, TO-251AB |
Payment method | Hand Fee |
Telegraphic Transfer | Request service |
Paypal | 4% fee |
Credit Card | 4% fee |
Western Union | Free of charge |
Money Gram | Free of charge |
Shipping Type | Lead Time |
DHL | 2-5 days |
Fedex | 2-5 days |
UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Registered Air Mail | 20-35 days |