SIHU3N50D-E3

Manufacturer Part SIHU3N50D-E3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 500V 3A TO251AA
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SIHU3N50D-E3 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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Product Attributes
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:175 pF @ 100 V
FET Feature:-
Power Dissipation (Max):69W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251AA
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
More Information
SIHU3N50D-E3
SIHU3N50D-E3
Vishay / Siliconix SIHU3N50D-E3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SIHU3N50D-E3 PDF
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