| Image | Part Number | Description / PDF | Quantity | Rfq |
|---|---|---|---|---|
 |
Maxim Integrated |
IC RF AMP GPS 1.575GHZ 10DFN |
0 |
|
 |
Analog Devices, Inc. |
GPS/GNSS ULTRA-LOW-NOISE-FIGURE |
70000 |
|
 |
Metelics (MACOM Technology Solutions) |
AMPLIFIER,SURFACE MOUNT,FET |
10 |
|
 |
MITEQ, Inc.（L3 Narda-MITEQ） |
LNA .1-18 GHZ |
3 |
|
 |
Analog Devices, Inc. |
IC AMP GP 20MHZ-500MHZ 16LFCSP |
1031 |
|
 |
Skyworks Solutions, Inc. |
IC AMP LTE 400MHZ-2.7GHZ SOT89-4 |
17639 |
|
 |
Analog Devices, Inc. |
IC RF AMP GP 6GHZ-9.5GHZ 32QFN |
7 |
|
 |
Analog Devices, Inc. |
IC RF AMP GP 50GHZ-66GHZ DIE |
0 |
|
 |
IR (Infineon Technologies) |
HIGH LINEARITY DUAL-BAND UMTS LN |
15000 |
|
 |
SMT GAIN BLOCK, DC - 4000 MHZ, 5 |
0 |
|
|
 |
Renesas Electronics America |
WIDEBAND LOW-NOISE RF AMPLIFIER |
2034258000 |
|
 |
MITEQ, Inc.（L3 Narda-MITEQ） |
IC RF AMP GP 100MHZ-8GHZ MODULE |
5 |
|
 |
SMT GAIN BLOCK, DC - 4000 MHZ, 5 |
0 |
|
|
 |
Metelics (MACOM Technology Solutions) |
IC AMP GP 2GHZ-6GHZ 10CFLATPACK |
0 |
|
 |
Analog Devices, Inc. |
IC RF AMP GP 0HZ-20GHZ 32CSMT |
421 |
|
 |
Analog Devices, Inc. |
IC AMP LTE 1.2GHZ-2.2GHZ 16SMT |
427 |
|
 |
Atmel (Microchip Technology) |
NARROW BAND MED POWER AMPLIFIER |
48000 |
|
 |
Tallysman Wireless |
IC RF AMP GPS 1GHZ-2GHZ TNC |
0 |
|
 |
IR (Infineon Technologies) |
WIDE BAND LOW POWER AMPLIFIER |
6599 |
|
 |
IR (Infineon Technologies) |
IC RF AMP WLAN 5GHZ-6GHZ TSLP7-8 |
19468 |
|
RF/IF amplifiers and RFID amplifiers are critical components in wireless communication systems, designed to boost signal strength while maintaining signal integrity. RF amplifiers operate across radio frequency (RF) and intermediate frequency (IF) bands, enabling signal transmission/reception in devices like base stations, IoT modules, and medical equipment. RFID amplifiers specialize in enhancing signals for radio frequency identification systems, ensuring reliable data exchange between readers and tags. These components are essential for modern technologies such as 5G networks, smart logistics, and contactless payment systems.
| Type | Functional Characteristics | Application Examples |
|---|---|---|
| Low Noise Amplifier (LNA) | High sensitivity, minimal added noise | RF receivers, satellite communication |
| Power Amplifier (PA) | High output power, efficiency optimization | Cellular base stations, Wi-Fi routers |
| IF Amplifier | Fixed/dynamic gain control at IF bands | Television tuners, radar systems |
| Variable Gain Amplifier (VGA) | Adjustable gain for signal conditioning | Software-defined radios, test equipment |
| RFID Reader Amplifier | Impedance matching for tag interrogation | UHF RFID readers, NFC terminals |
Typical RF amplifiers consist of: - Dielectric substrate (e.g., FR4, Rogers material) with conductive traces - Transistor elements (GaAs FETs, SiGe BJTs, or GaN HEMTs) - Impedance matching networks (LC circuits or microstrip lines) - Thermal management (heat sinks or thermal vias) - Shielded enclosure for EMI protection Modern designs integrate bias tees, directional couplers, and protection diodes.
| Parameter | Description | Importance |
|---|---|---|
| Gain (dB) | Signal amplification ratio | Determines signal reach and clarity |
| Noise Figure (dB) | Additional noise introduced | Impacts receiver sensitivity |
| Output Power (dBm) | Maximum deliverable power | Dictates transmission distance |
| Frequency Range (GHz) | Operational bandwidth | System compatibility factor |
| P1dB Compression | Linear-to-saturation threshold | Ensures signal fidelity |
| IP3 (dBm) | Intermodulation distortion resistance | Multi-signal environment performance |
| Manufacturer | Representative Product | Key Features |
|---|---|---|
| Texas Instruments | LMX2500 | Integrated synthesizer with 15dBm output power |
| Analog Devices | ADAR1000 | 4-channel mmWave beamformer for 24GHz RFID |
| STMicroelectronics | STRF79X | Highly integrated NFC/RFID transceiver |
| Nordic Semiconductor | nRF21540 | 2.4GHz front-end module with +20dB gain |
| Impinj | R4H001 | UHF Gen2 RFID reader IC with on-chip amplifier |
Key considerations include: - Frequency alignment with system requirements - Gain flatness across operational bandwidth - Thermal dissipation capabilities - Package type (QFN, BGA, or connectorized) - Environmental compliance (temperature, humidity) - Cost vs. performance trade-offs
Emerging trends include: - Transition to GaN technology for higher power density - Silicon integration for mmWave applications - AI-driven dynamic impedance matching - Energy-efficient Class-J and Doherty architectures - Convergence with photonic ICs for 6G systems