Memory

Part Number	Description / PDF	Quantity
70V631S12PRFGI Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 128TQFP	0
6116LA90DB Renesas Electronics America	IC SRAM 16KBIT PARALLEL 24CDIP	338
71V25761S183PFG8 Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 100TQFP	0
7142LA100PDG Renesas Electronics America	IC SRAM 16KBIT PARALLEL 48DIP	0
71V016SA20YG8 Renesas Electronics America	IC SRAM 1MBIT PARALLEL 44SOJ	0
71V65703S85BGI8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 119PBGA	0
70T653MS12BC8 Renesas Electronics America	IC SRAM 18MBIT PARALLEL 256CABGA	0
71V35761SA166BQG Renesas Electronics America	IC SRAM 4.5MBIT PAR 165CABGA	0
71V124SA12PHGI8 Renesas Electronics America	IC SRAM 1MBIT PARALLEL 32TSOP II	0
71V3577S75BGGI Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 119PBGA	0
71V3556S166PFGI8 Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 100TQFP	0
70V3599S166BC8 Renesas Electronics America	IC SRAM 4.5MBIT PAR 256CABGA	0
71V2556S150PFG8 Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 100TQFP	0
70T659S15BC Renesas Electronics America	IC SRAM 4.5MBIT PAR 256CABGA	0
71T75602S166PFG Renesas Electronics America	IC SRAM 18MBIT PARALLEL 100TQFP	0
7005L20JGI Renesas Electronics America	IC SRAM 64KBIT PARALLEL 68PLCC	0
UPD44164182BF5-E40X-EQ3-A Renesas Electronics America	DDR SRAM, 1MX18, 0.45NS	288
70261L15PFG Renesas Electronics America	IC SRAM 256KBIT PARALLEL 100TQFP	0
71V3556S166PFG8 Renesas Electronics America	IC SRAM 4.5MBIT PARALLEL 100TQFP	0
70T651S15BF8 Renesas Electronics America	IC SRAM 9MBIT PARALLEL 208CABGA	0

Memory

1. Overview

Memory integrated circuits (ICs) are semiconductor devices used for storing digital data in electronic systems. As fundamental components of modern electronics, they enable data retention and retrieval in computers, mobile devices, industrial equipment, and automotive systems. Memory ICs are categorized into volatile (requires power to retain data) and non-volatile (retains data without power) types, playing critical roles in system performance, storage capacity, and energy efficiency.

2. Major Types and Functional Classification

Type	Functional Characteristics	Application Examples
DRAM (Dynamic RAM)	High-density, low-cost, requires periodic refresh	PCs, Servers, Graphics Cards
NAND Flash	Non-volatile, high endurance, block-level access	SSDs, USB Drives, Mobile Storage
SRAM (Static RAM)	High-speed, low density, no refresh required	Cache Memory, Networking Equipment
NOR Flash	Random access, execute-in-place capability	Embedded Systems, Automotive ECUs
MRAM (Magnetoresistive RAM)	Non-volatile, unlimited endurance, low power	IoT Devices, Industrial Sensors

3. Structure and Composition

Memory ICs typically consist of:

Storage Cell Array: Matrix of memory cells (transistors/capacitors for DRAM, floating-gate transistors for Flash)
Address Decoder: Selects specific memory locations
I/O Circuits: Data input/output interfaces
Control Logic: Manages read/write operations and timing
Power Management Units: Optimizes energy consumption

Advanced packages include BGA (Ball Grid Array) and 3D-stacked configurations for density optimization.

4. Key Technical Specifications

Parameter	Description	Importance
Storage Capacity	Data volume (Gb/GiB)	Determines system memory limits
Access Time	ns/predictable latency	Impacts processing speed
Power Consumption	mW/MHz	Affects battery life and thermal design
Endurance	P/E cycles (Flash)	Dictates product lifespan
Data Retention	Years (non-volatile)	Critical for long-term storage

5. Application Areas

Consumer Electronics: Smartphones (NAND Flash), Gaming Consoles (GDDR6)
Industrial Automation: PLCs (SRAM), Data Loggers (MRAM)
Automotive Systems: ADAS (LPDDR5), Infotainment (eMMC)
Enterprise Storage: SSD Controllers (3D NAND), Servers (RDIMM)

6. Leading Manufacturers and Products

Manufacturer	Representative Products
Samsung Electronics	V-NAND (9x-layer), LPDDR5X
SK hynix	HBM3 (8GB/s bandwidth), GDDR6
Microchip Technology	Serial NOR Flash (SST26)
Kioxia Corporation	BiCS FLASH (3D NAND)
Infineon Technologies	MRAM (40nm process)

7. Selection Recommendations

Key considerations:

Match memory type to application requirements (e.g., NOR Flash for code storage)
Evaluate bandwidth vs. latency tradeoffs
Analyze temperature and vibration specifications
Assess long-term supply stability
Optimize cost-per-bit metrics

Case Study: A smartphone manufacturer selected UFS 3.1 (NAND-based) for 2100MB/s read speeds, improving app launch times by 35%.

8. Industry Trends

Future directions include:

3D NAND scaling beyond 200 layers
Emerging memories (ReRAM, PCM) for AI acceleration
Package-on-Package (PoP) integration
AI-optimized memory architectures (Processing-in-Memory)
Green manufacturing processes (EUV lithography)