Diodes - Zener - Single

Image Part Number Description / PDF Quantity Rfq
DZ2703300L

DZ2703300L

Panasonic

DIODE ZENER 3.31V 120MW SSSMINI2

0

MAZ40200LF

MAZ40200LF

Panasonic

DIODE ZENER 2V 370MW DO34

0

MAZ41400MF

MAZ41400MF

Panasonic

DIODE ZENER 14V 370MW DO34

0

MAZ42000MF

MAZ42000MF

Panasonic

DIODE ZENER 20V 370MW DO34

0

DZ2713000L

DZ2713000L

Panasonic

DIODE ZENER 13.03V SSSMINI2

0

DZ2702700L

DZ2702700L

Panasonic

DIODE ZENER 2.7V 120MW SSSMINI2

0

DZ2S270M0L

DZ2S270M0L

Panasonic

DIODE ZENER 27.01V 150MW SSMINI2

0

MAZ408200F

MAZ408200F

Panasonic

DIODE ZENER 8.2V 370MW DO34

0

DZ2704700L

DZ2704700L

Panasonic

DIODE ZENER 4.71V 120MW SSSMINI2

0

DZ2702400L

DZ2702400L

Panasonic

DIODE ZENER 2.4V 120MW SSSMINI2

0

DZ2704300L

DZ2704300L

Panasonic

DIODE ZENER 4.31V 120MW SSSMINI2

0

DZ2S39000L

DZ2S39000L

Panasonic

DIODE ZENER 39V 150MW SSMINI2

0

DZ2703900L

DZ2703900L

Panasonic

DIODE ZENER 3.91V 120MW SSSMINI2

0

DZ2S390M0L

DZ2S390M0L

Panasonic

DIODE ZENER 39.01V 150MW SSMINI2

0

DZ2715000L

DZ2715000L

Panasonic

DIODE ZENER 14.93V SSSMINI2

0

DZ2733000L

DZ2733000L

Panasonic

DIODE ZENER 33V 120MW SSSMINI2

0

DZ2739000L

DZ2739000L

Panasonic

DIODE ZENER 39V 120MW SSSMINI2

0

DZ2703000L

DZ2703000L

Panasonic

DIODE ZENER 3V 120MW SSSMINI2

0

DZ2S075M0L

DZ2S075M0L

Panasonic

DIODE ZENER 7.51V 150MW SSMINI2

0

Diodes - Zener - Single

1. Overview

Single Zener diodes are discrete semiconductor devices designed to operate in the reverse breakdown region, maintaining a stable voltage across a wide range of currents. Based on the Zener effect and avalanche breakdown mechanisms, these components are critical for voltage regulation, reference, and protection circuits. They serve as foundational elements in power supplies, analog circuits, and precision measurement systems, ensuring reliability in electronics ranging from consumer devices to industrial equipment.

2. Main Types and Functional Classification

TypeFunctional CharacteristicsApplication Examples
Low-Voltage Zener (2.4V-10V)Utilizes Zener effect with sharp breakdown characteristicsVoltage references, comparator circuits
Mid-Voltage Zener (10V-100V)Combines Zener and avalanche breakdownPower supply regulation, clamping circuits
High-Voltage Zener (>100V)Primarily avalanche breakdown mechanismHigh-voltage protection, industrial controls
Surface-Mount (SMD) ZenerMiniaturized packaging for automated assemblyMobile devices, wearable electronics

3. Structure and Composition

Single Zener diodes consist of a heavily doped PN junction semiconductor structure, typically fabricated from silicon. The cathode terminal is marked with a band, while the anode connects to the P-type material. Advanced devices employ passivation layers (e.g., silicon dioxide) to improve stability and reliability. Common packaging includes axial leaded (DO-35, DO-41) and surface-mount (SOD-123, SOT-23) formats with glass or plastic encapsulation for environmental protection.

4. Key Technical Specifications

ParameterDescriptionImportance
Zener Voltage (Vz)Specified reverse breakdown voltage at test currentDetermines operating voltage level
Power Dissipation (Pz)Maximum power handling capabilityDefines thermal management requirements
Dynamic Impedance (Zz)AC resistance affecting voltage stabilityImpacts regulation performance
Temperature Coefficient (TC)Voltage drift per degree CelsiusCritical for precision applications
Reverse Leakage Current (Ir)Off-state current at rated voltageAffects power efficiency

5. Application Fields

Key industries include:

  • Power electronics (switching power supplies, DC-DC converters)
  • Industrial automation (PLC voltage references, sensor interfaces)
  • Consumer electronics (mobile chargers, LED drivers)
  • Automotive systems (battery management, onboard charging)
  • Test equipment (precision multimeters, calibration devices)

Example: The TL431 programmable Zener diode is widely used in SMPS feedback loops to achieve 1% voltage accuracy.

6. Leading Manufacturers and Products

ManufacturerRepresentative ProductKey Specifications
TI (Texas Instruments)LM4040-N1.2V-10V, 0.1% initial tolerance, SOT-23
ON Semiconductor1N47xx Series3.3V-400V, 1W-50W power range
STMicroelectronicsBZX84-C5V15.1V, 300mW, 2% tolerance, SOD-323
NexperiaPXZGxx Series2.5V-75V, AEC-Q101 automotive qualification

7. Selection Guidelines

Key considerations:

  1. Determine required Vz with 5% margin over operating current range
  2. Calculate Pz = Vz maximum expected current
  3. Select package type based on board space and thermal requirements
  4. For precision applications, prioritize TC < 100ppm/ C and low Zz
  5. Consider automotive-grade parts for harsh environments

8. Industry Trends

Current development trends include: - Miniaturization with advanced trench Zener structures - Integration with ESD protection in combo devices - Wide bandgap materials (SiC) for high-voltage applications - Improved temperature stability through laser trimming - Increased adoption in renewable energy systems for voltage monitoring - Growth in automotive electronics driving AEC-Q qualified parts

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