Manufacturer Part | QJD1210011 |
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Manufacturer | Powerex, Inc. |
Description | MOSFET 2N-CH 1200V 100A SIC |
Category | Discrete Semiconductor |
RoHS | Lead free / RoHS Compliant |
Warranty | 365 days |
Datasheet | QJD1210011 PDF |
Availability | 0 pieces |
Shipped from | HK warehouse |
Expected Shipping | Dec 26 - Dec 30 2024 |
In Stock Min.: 1 Mult.: 1
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Type | Description |
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Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Rds On (Max) @ Id, Vgs: | 25mOhm @ 100A, 20V |
Vgs(th) (Max) @ Id: | 5V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: | 500nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 10200pF @ 800V |
Power - Max: | 900W |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Payment method | Hand Fee |
Telegraphic Transfer | Request service |
Paypal | 4% fee |
Credit Card | 4% fee |
Western Union | Free of charge |
Money Gram | Free of charge |
Shipping Type | Lead Time |
DHL | 2-5 days |
Fedex | 2-5 days |
UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Registered Air Mail | 20-35 days |