Manufacturer Part | GT60N321(Q) |
---|---|
Manufacturer | Toshiba Electronic Devices and Storage Corporation |
Description | IGBT 1000V 60A 170W TO3P LH |
Category | Discrete Semiconductor |
RoHS | Lead free / RoHS Compliant |
Warranty | 365 days |
Datasheet | GT60N321(Q) PDF |
Availability | 0 pieces |
Shipped from | HK warehouse |
Expected Shipping | Dec 23 - Dec 27 2024 |
In Stock Min.: 1 Mult.: 1
Not satisfied with the price? Want a lower wholesale price? Please send RFQ, and we will respond immediately
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
IGBT Type: | - |
Voltage - Collector Emitter Breakdown (Max): | 1000 V |
Current - Collector (Ic) (Max): | 60 A |
Current - Collector Pulsed (Icm): | 120 A |
Vce(on) (Max) @ Vge, Ic: | 2.8V @ 15V, 60A |
Power - Max: | 170 W |
Switching Energy: | - |
Input Type: | Standard |
Gate Charge: | - |
Td (on/off) @ 25°C: | 330ns/700ns |
Test Condition: | - |
Reverse Recovery Time (trr): | 2.5 µs |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-3PL |
Supplier Device Package: | TO-3P(LH) |
Payment method | Hand Fee |
Telegraphic Transfer | Request service |
Paypal | 4% fee |
Credit Card | 4% fee |
Western Union | Free of charge |
Money Gram | Free of charge |
Shipping Type | Lead Time |
DHL | 2-5 days |
Fedex | 2-5 days |
UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Registered Air Mail | 20-35 days |