2SJ668(TE16L1,NQ)

Manufacturer Part 2SJ668(TE16L1,NQ)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET P-CHANNEL 60V 5A PW-MOLD
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet 2SJ668(TE16L1,NQ) PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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Product Attributes
Type Description
Series:U-MOSIII
Package:Tape & Reel (TR)
Part Status:Last Time Buy
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:170mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 10 V
FET Feature:-
Power Dissipation (Max):20W (Tc)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:PW-MOLD
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
More Information
2SJ668(TE16L1,NQ)
2SJ668(TE16L1,NQ)
Toshiba Electronic Devices and Storage Corporation 2SJ668(TE16L1,NQ) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
2SJ668(TE16L1,NQ) PDF
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MOSFET P-CHANNEL 60V 5A PW-MOLD

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