TK12J60W,S1VE(S

Manufacturer Part TK12J60W,S1VE(S
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 600V 11.5A TO3P
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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Product Attributes
Type Description
Series:-
Package:Tray
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:300mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:890 pF @ 300 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:150°C
Mounting Type:Through Hole
Supplier Device Package:TO-3P(N)
Package / Case:TO-3P-3, SC-65-3
More Information
TK12J60W,S1VE(S
TK12J60W,S1VE(S
Toshiba Electronic Devices and Storage Corporation TK12J60W,S1VE(S is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
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