SI4200DY-T1-GE3

Manufacturer Part SI4200DY-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET 2N-CH 25V 8A 8SOIC
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SI4200DY-T1-GE3 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 23 - Nov 27 2024
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Product Attributes
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:8A
Rds On (Max) @ Id, Vgs:25mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:415pF @ 13V
Power - Max:2.8W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
More Information
SI4200DY-T1-GE3
SI4200DY-T1-GE3
Vishay / Siliconix SI4200DY-T1-GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SI4200DY-T1-GE3 PDF
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