SI5513DC-T1-E3

Manufacturer Part SI5513DC-T1-E3
Manufacturer Vishay / Siliconix
Description MOSFET N/P-CH 20V 3.1A 1206-8
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SI5513DC-T1-E3 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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Product Attributes
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:3.1A, 2.1A
Rds On (Max) @ Id, Vgs:75mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:1.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:1206-8 ChipFET™
More Information
SI5513DC-T1-E3
SI5513DC-T1-E3
Vishay / Siliconix SI5513DC-T1-E3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SI5513DC-T1-E3 PDF
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