1N8030-GA

Manufacturer Part 1N8030-GA
Manufacturer GeneSiC Semiconductor
Description DIODE SCHOTTKY 650V 750MA TO257
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet 1N8030-GA PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 29 - Dec 03 2024
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Product Attributes
Type Description
Series:-
Package:Tube
Part Status:Obsolete
Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):750mA
Voltage - Forward (Vf) (Max) @ If:1.39 V @ 750 mA
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:5 µA @ 650 V
Capacitance @ Vr, F:76pF @ 1V, 1MHz
Mounting Type:Through Hole
Package / Case:TO-257-3
Supplier Device Package:TO-257
Operating Temperature - Junction:-55°C ~ 250°C
More Information
1N8030-GA
1N8030-GA
GeneSiC Semiconductor 1N8030-GA is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
1N8030-GA PDF
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DIODE SCHOTTKY 650V 750MA TO257

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