2SJ438,Q(M

Manufacturer Part 2SJ438,Q(M
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET P-CH TO220NIS
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet 2SJ438,Q(M PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:*
Package:Bulk
Part Status:Obsolete
FET Type:-
Technology:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:5A (Tj)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):-
Input Capacitance (Ciss) (Max) @ Vds:-
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-
Mounting Type:Through Hole
Supplier Device Package:TO-220NIS
Package / Case:TO-220-3 Full Pack
More Information
2SJ438,Q(M
2SJ438,Q(M
Toshiba Electronic Devices and Storage Corporation 2SJ438,Q(M is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
2SJ438,Q(M PDF
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DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
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EMS 3-7 days
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MOSFET P-CH TO220NIS

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