TPC8113(TE12L,Q)

Manufacturer Part TPC8113(TE12L,Q)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET P-CH 30V 11A 8SOP
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TPC8113(TE12L,Q) PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 29 - Dec 03 2024
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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:107 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOP (5.5x6.0)
Package / Case:8-SOIC (0.173", 4.40mm Width)
More Information
TPC8113(TE12L,Q)
TPC8113(TE12L,Q)
Toshiba Electronic Devices and Storage Corporation TPC8113(TE12L,Q) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TPC8113(TE12L,Q) PDF
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