2SA965-O(TE6,F,M)

Manufacturer Part 2SA965-O(TE6,F,M)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description TRANS PNP 800MA 120V TO226-3
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet 2SA965-O(TE6,F,M) PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 19 - Dec 23 2024
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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
Transistor Type:PNP
Current - Collector (Ic) (Max):800 mA
Voltage - Collector Emitter Breakdown (Max):120 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 100mA, 5V
Power - Max:900 mW
Frequency - Transition:120MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Long Body
Supplier Device Package:LSTM
More Information
2SA965-O(TE6,F,M)
2SA965-O(TE6,F,M)
Toshiba Electronic Devices and Storage Corporation 2SA965-O(TE6,F,M) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
2SA965-O(TE6,F,M) PDF
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Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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TRANS PNP 800MA 120V TO226-3

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