IFS75B12N3E4B31BOSA1

Manufacturer Part IFS75B12N3E4B31BOSA1
Manufacturer IR (Infineon Technologies)
Description IGBT MOD 1200V 150A 385W
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IFS75B12N3E4B31BOSA1 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 29 - Dec 03 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tray
Part Status:Active
IGBT Type:Trench Field Stop
Configuration:Full Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):150 A
Power - Max:385 W
Vce(on) (Max) @ Vge, Ic:2.15V @ 15V, 75A
Current - Collector Cutoff (Max):1 mA
Input Capacitance (Cies) @ Vce:4.3 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
More Information
IFS75B12N3E4B31BOSA1
IFS75B12N3E4B31BOSA1
IR (Infineon Technologies) IFS75B12N3E4B31BOSA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IFS75B12N3E4B31BOSA1 PDF
Same Series
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IFS75S12N3T4_B11
TRANSISTOR IGBT MODULE
Rochester Electronics
IFS75B12N3E4B31BOSA1
IFS75B12N3E4B31BOSA1
IGBT MOD 1200V 150A 385W
IR (Infineon Technologies)
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Payment
Payment method Hand Fee
Telegraphic Transfer Request service
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Credit Card 4% fee
Western Union Free of charge
Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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