Manufacturer Part | BSM75GB170DN2HOSA1 |
---|---|
Manufacturer | Rochester Electronics |
Description | IGBT, 110A I(C), 1700V V(BR)CES, |
Category | Discrete Semiconductor |
RoHS | Lead free / RoHS Compliant |
Warranty | 365 days |
Datasheet | BSM75GB170DN2HOSA1 PDF |
Availability | 1015 pieces |
Shipped from | HK warehouse |
Expected Shipping | Nov 29 - Dec 03 2024 |
In Stock Min.: 1 Mult.: 1
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Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
IGBT Type: | - |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1.7 V |
Current - Collector (Ic) (Max): | 110 A |
Power - Max: | 625 W |
Vce(on) (Max) @ Vge, Ic: | 3.9V @ 15V, 75A |
Current - Collector Cutoff (Max): | - |
Input Capacitance (Cies) @ Vce: | 11 nF @ 25 V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
Payment method | Hand Fee |
Telegraphic Transfer | Request service |
Paypal | 4% fee |
Credit Card | 4% fee |
Western Union | Free of charge |
Money Gram | Free of charge |
Shipping Type | Lead Time |
DHL | 2-5 days |
Fedex | 2-5 days |
UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Registered Air Mail | 20-35 days |