BSM75GB170DN2HOSA1

Manufacturer Part BSM75GB170DN2HOSA1
Manufacturer Rochester Electronics
Description IGBT, 110A I(C), 1700V V(BR)CES,
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet BSM75GB170DN2HOSA1 PDF
Availability 1015 pieces
Shipped from HK warehouse
Expected Shipping Nov 29 - Dec 03 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:-
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1.7 V
Current - Collector (Ic) (Max):110 A
Power - Max:625 W
Vce(on) (Max) @ Vge, Ic:3.9V @ 15V, 75A
Current - Collector Cutoff (Max):-
Input Capacitance (Cies) @ Vce:11 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
More Information
BSM75GB170DN2HOSA1
BSM75GB170DN2HOSA1
Rochester Electronics BSM75GB170DN2HOSA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
BSM75GB170DN2HOSA1 PDF
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Payment
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Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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IGBT, 110A I(C), 1700V V(BR)CES,

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