FPF2C110BI07AS2

Manufacturer Part FPF2C110BI07AS2
Manufacturer Sanyo Semiconductor/ON Semiconductor
Description IGBT MODULE 650V 40A 300W F2
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet FPF2C110BI07AS2 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 19 - Dec 23 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:-
Package:Tray
Part Status:Active
IGBT Type:-
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):40 A
Power - Max:300 W
Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 40A
Current - Collector Cutoff (Max):250 µA
Input Capacitance (Cies) @ Vce:-
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Through Hole
Package / Case:30-DIP Module
Supplier Device Package:F2
More Information
FPF2C110BI07AS2
FPF2C110BI07AS2
Sanyo Semiconductor/ON Semiconductor FPF2C110BI07AS2 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
FPF2C110BI07AS2 PDF
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