BSO211PNTMA1

Manufacturer Part BSO211PNTMA1
Manufacturer Rochester Electronics
Description POWER FIELD-EFFECT TRANSISTOR, 4
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet BSO211PNTMA1 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 29 - Dec 03 2024
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Product Attributes
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Obsolete
FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:4.7A
Rds On (Max) @ Id, Vgs:67mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:23.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:920pF @ 15V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:P-DSO-8
More Information
BSO211PNTMA1
BSO211PNTMA1
Rochester Electronics BSO211PNTMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
BSO211PNTMA1 PDF
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POWER FIELD-EFFECT TRANSISTOR, 4

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