Manufacturer Part | BSO211PNTMA1 |
---|---|
Manufacturer | Rochester Electronics |
Description | POWER FIELD-EFFECT TRANSISTOR, 4 |
Category | Discrete Semiconductor |
RoHS | Lead free / RoHS Compliant |
Warranty | 365 days |
Datasheet | BSO211PNTMA1 PDF |
Availability | 0 pieces |
Shipped from | HK warehouse |
Expected Shipping | Nov 29 - Dec 03 2024 |
In Stock Min.: 1 Mult.: 1
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Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A |
Rds On (Max) @ Id, Vgs: | 67mOhm @ 4.7A, 4.5V |
Vgs(th) (Max) @ Id: | 1.2V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 23.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 920pF @ 15V |
Power - Max: | 2W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | P-DSO-8 |
Payment method | Hand Fee |
Telegraphic Transfer | Request service |
Paypal | 4% fee |
Credit Card | 4% fee |
Western Union | Free of charge |
Money Gram | Free of charge |
Shipping Type | Lead Time |
DHL | 2-5 days |
Fedex | 2-5 days |
UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Registered Air Mail | 20-35 days |