BSM600D12P3G001

Manufacturer Part BSM600D12P3G001
Manufacturer ROHM Semiconductor
Description 1200V, 576A, HALF BRIDGE, FULL S
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 5 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:600A (Tc)
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:5.6V @ 182mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:31000pF @ 10V
Power - Max:2450W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
More Information
BSM600D12P3G001
BSM600D12P3G001
ROHM Semiconductor BSM600D12P3G001 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Same Series
BSM600D12P3G001
BSM600D12P3G001
1200V, 576A, HALF BRIDGE, FULL S
ROHM Semiconductor
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1200V, 576A, HALF BRIDGE, FULL S

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