BSM400D12P2G003

Manufacturer Part BSM400D12P2G003
Manufacturer ROHM Semiconductor
Description SILICON CARBIDE POWER MODULE. B
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 4 pieces
Shipped from HK warehouse
Expected Shipping Nov 25 - Nov 29 2024
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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:400A (Tc)
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:4V @ 85mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:38000pF @ 10V
Power - Max:2450W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:-
Package / Case:Module
Supplier Device Package:Module
More Information
BSM400D12P2G003
BSM400D12P2G003
ROHM Semiconductor BSM400D12P2G003 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Same Series
BSM400D12P2G003
BSM400D12P2G003
SILICON CARBIDE POWER MODULE. B
ROHM Semiconductor
BSM400D12P3G002
BSM400D12P3G002
1200V, 358A, HALF BRIDGE, FULL S
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