| Manufacturer Part | WNSC101200Q |
|---|---|
| Manufacturer | WeEn Semiconductors Co., Ltd |
| Description | SILICON CARBIDE POWER DIODE |
| Category | Discrete Semiconductor |
| RoHS | Lead free / RoHS Compliant |
| Warranty | 365 days |
| Availability | 2980 pieces |
| Shipped from | HK warehouse |
| Expected Shipping | Dec 19 - Dec 23 2024 |
In Stock Min.: 1 Mult.: 1
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| Type | Description |
|---|---|
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| Diode Type: | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max): | 1200 V |
| Current - Average Rectified (Io): | 10A |
| Voltage - Forward (Vf) (Max) @ If: | 1.6 V @ 10 A |
| Speed: | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr): | 0 ns |
| Current - Reverse Leakage @ Vr: | 110 µA @ 1200 V |
| Capacitance @ Vr, F: | 510pF @ 1V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-2 |
| Supplier Device Package: | TO-220AC |
| Operating Temperature - Junction: | 175°C (Max) |
| Payment method | Hand Fee |
| Telegraphic Transfer | Request service |
| Paypal | 4% fee |
| Credit Card | 4% fee |
| Western Union | Free of charge |
| Money Gram | Free of charge |
| Shipping Type | Lead Time |
| DHL | 2-5 days |
| Fedex | 2-5 days |
| UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
| Registered Air Mail | 20-35 days |
SILICON CARBIDE POWER DIODE
