TK1R5R04PB,LXGQ

Manufacturer Part TK1R5R04PB,LXGQ
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 40V 160A D2PAK
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 1930 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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Product Attributes
Type Description
Series:U-MOSIX-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:160A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:103 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5500 pF @ 10 V
FET Feature:-
Power Dissipation (Max):205W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:D2PAK+
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
More Information
TK1R5R04PB,LXGQ
TK1R5R04PB,LXGQ
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Documents
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