TSM80N1R2CL C0G

Manufacturer Part TSM80N1R2CL C0G
Manufacturer TSC (Taiwan Semiconductor)
Description MOSFET N-CH 800V 5.5A TO262S
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet TSM80N1R2CL C0G PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 06 - Dec 10 2024
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Product Attributes
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19.4 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:685 pF @ 100 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-262S (I2PAK)
Package / Case:TO-262-3 Short Leads, I²Pak
More Information
TSM80N1R2CL C0G
TSM80N1R2CL C0G
TSC (Taiwan Semiconductor) TSM80N1R2CL C0G is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
TSM80N1R2CL C0G PDF
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