DF200R12KE3HOSA1

Manufacturer Part DF200R12KE3HOSA1
Manufacturer IR (Infineon Technologies)
Description IGBT MODULE 1200V 1040W
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet DF200R12KE3HOSA1 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 26 - Nov 30 2024
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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
IGBT Type:-
Configuration:Single
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):-
Power - Max:1040 W
Vce(on) (Max) @ Vge, Ic:2.15V @ 15V, 200A
Current - Collector Cutoff (Max):5 mA
Input Capacitance (Cies) @ Vce:14 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:-40°C ~ 125°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
More Information
DF200R12KE3HOSA1
DF200R12KE3HOSA1
IR (Infineon Technologies) DF200R12KE3HOSA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
DF200R12KE3HOSA1 PDF
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DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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