RN1968(TE85L,F)

Manufacturer Part RN1968(TE85L,F)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description TRANS 2NPN PREBIAS 0.2W US6
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet RN1968(TE85L,F) PDF
Availability 3000 pieces
Shipped from HK warehouse
Expected Shipping Dec 25 - Dec 29 2024
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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):22kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250MHz
Power - Max:200mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6
More Information
RN1968(TE85L,F)
RN1968(TE85L,F)
Toshiba Electronic Devices and Storage Corporation RN1968(TE85L,F) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
RN1968(TE85L,F) PDF
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