RN1910FE(T5L,F,T)

Manufacturer Part RN1910FE(T5L,F,T)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description TRANS 2NPN PREBIAS 0.1W ES6
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet RN1910FE(T5L,F,T) PDF
Availability 905 pieces
Shipped from HK warehouse
Expected Shipping Dec 19 - Dec 23 2024
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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250MHz
Power - Max:100mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:ES6
More Information
RN1910FE(T5L,F,T)
RN1910FE(T5L,F,T)
Toshiba Electronic Devices and Storage Corporation RN1910FE(T5L,F,T) is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
RN1910FE(T5L,F,T) PDF
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Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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TRANS 2NPN PREBIAS 0.1W ES6

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