RN1113MFV,L3F

Manufacturer Part RN1113MFV,L3F
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description TRANS PREBIAS NPN 50V 0.1A VESM
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet RN1113MFV,L3F PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 13 - Dec 17 2024
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Product Attributes
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:-
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:VESM
More Information
RN1113MFV,L3F
RN1113MFV,L3F
Toshiba Electronic Devices and Storage Corporation RN1113MFV,L3F is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
RN1113MFV,L3F PDF
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Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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