EFC6602R-TR

Manufacturer Part EFC6602R-TR
Manufacturer Rochester Electronics
Description POWER FIELD-EFFECT TRANSISTOR
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet EFC6602R-TR PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 29 - Dec 03 2024
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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss):12V
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
Rds On (Max) @ Id, Vgs:5.9mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:55nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:2W (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-XFBGA, WLCSP
Supplier Device Package:6-WLCSP (1.81x2.7)
More Information
EFC6602R-TR
EFC6602R-TR
Rochester Electronics EFC6602R-TR is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
EFC6602R-TR PDF
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Payment
Payment method Hand Fee
Telegraphic Transfer Request service
Paypal 4% fee
Credit Card 4% fee
Western Union Free of charge
Money Gram Free of charge
Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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