SIB900EDK-T1-GE3

Manufacturer Part SIB900EDK-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET 2N-CH 20V 1.5A SC-75-6
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SIB900EDK-T1-GE3 PDF
Availability 465 pieces
Shipped from HK warehouse
Expected Shipping Nov 23 - Nov 27 2024
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Product Attributes
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:1.5A
Rds On (Max) @ Id, Vgs:225mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:3.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SC-75-6L Dual
Supplier Device Package:PowerPAK® SC-75-6L Dual
More Information
SIB900EDK-T1-GE3
SIB900EDK-T1-GE3
Vishay / Siliconix SIB900EDK-T1-GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SIB900EDK-T1-GE3 PDF
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