BSO615CGHUMA1

Manufacturer Part BSO615CGHUMA1
Manufacturer Rochester Electronics
Description PFET, 3.1A I(D), 60V, 0.11OHM, 2
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet BSO615CGHUMA1 PDF
Availability 6253 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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Product Attributes
Type Description
Series:SIPMOS®
Package:Bulk
Part Status:Active
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:3.1A (Ta), 2A (Ta)
Rds On (Max) @ Id, Vgs:110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:2V @ 20µA, 2V @ 450µA
Gate Charge (Qg) (Max) @ Vgs:22.5nC, 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:380pF, 460pF @ 25V
Power - Max:2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:PG-DSO-8
More Information
BSO615CGHUMA1
BSO615CGHUMA1
Rochester Electronics BSO615CGHUMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
BSO615CGHUMA1 PDF
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BSO615CGHUMA1

BSO615CGHUMA1

PFET, 3.1A I(D), 60V, 0.11OHM, 2

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