SIS903DN-T1-GE3

Manufacturer Part SIS903DN-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET DUAL P-CHAN POWERPAK 1212
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SIS903DN-T1-GE3 PDF
Availability 1986 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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Product Attributes
Type Description
Series:TrenchFET® Gen III
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 P-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Rds On (Max) @ Id, Vgs:20.1mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:2565pF @ 10V
Power - Max:2.6W (Ta), 23W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® 1212-8 Dual
Supplier Device Package:PowerPAK® 1212-8 Dual
More Information
SIS903DN-T1-GE3
SIS903DN-T1-GE3
Vishay / Siliconix SIS903DN-T1-GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SIS903DN-T1-GE3 PDF
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