NTMFD4C88NT1G

Manufacturer Part NTMFD4C88NT1G
Manufacturer Rochester Electronics
Description POWER FIELD-EFFECT TRANSISTOR
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet NTMFD4C88NT1G PDF
Availability 7500 pieces
Shipped from HK warehouse
Expected Shipping Nov 29 - Dec 03 2024
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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:11.7A, 14.2A
Rds On (Max) @ Id, Vgs:5.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1252pF @ 15V
Power - Max:1.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-DFN (5x6)
More Information
NTMFD4C88NT1G
NTMFD4C88NT1G
Rochester Electronics NTMFD4C88NT1G is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
NTMFD4C88NT1G PDF
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DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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POWER FIELD-EFFECT TRANSISTOR

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