Manufacturer Part | FF8MR12W2M1B11BOMA1 |
---|---|
Manufacturer | IR (Infineon Technologies) |
Description | MOSFET 2N-CH 1200V AG-EASY2BM-2 |
Category | Discrete Semiconductor |
RoHS | Lead free / RoHS Compliant |
Warranty | 365 days |
Availability | 45 pieces |
Shipped from | HK warehouse |
Expected Shipping | Nov 26 - Nov 30 2024 |
In Stock Min.: 1 Mult.: 1
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Type | Description |
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Series: | CoolSiC™+ |
Package: | Tray |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): | 1200V |
Current - Continuous Drain (Id) @ 25°C: | 150A (Tj) |
Rds On (Max) @ Id, Vgs: | 7.5mOhm @ 150A, 15V (Typ) |
Vgs(th) (Max) @ Id: | 5.55V @ 60mA |
Gate Charge (Qg) (Max) @ Vgs: | 372nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds: | 11000pF @ 800V |
Power - Max: | 20mW (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | AG-EASY2BM-2 |
Payment method | Hand Fee |
Telegraphic Transfer | Request service |
Paypal | 4% fee |
Credit Card | 4% fee |
Western Union | Free of charge |
Money Gram | Free of charge |
Shipping Type | Lead Time |
DHL | 2-5 days |
Fedex | 2-5 days |
UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Registered Air Mail | 20-35 days |