FF8MR12W2M1B11BOMA1

Manufacturer Part FF8MR12W2M1B11BOMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET 2N-CH 1200V AG-EASY2BM-2
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Availability 45 pieces
Shipped from HK warehouse
Expected Shipping Nov 26 - Nov 30 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:CoolSiC™+
Package:Tray
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V
Current - Continuous Drain (Id) @ 25°C:150A (Tj)
Rds On (Max) @ Id, Vgs:7.5mOhm @ 150A, 15V (Typ)
Vgs(th) (Max) @ Id:5.55V @ 60mA
Gate Charge (Qg) (Max) @ Vgs:372nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:11000pF @ 800V
Power - Max:20mW (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:AG-EASY2BM-2
More Information
FF8MR12W2M1B11BOMA1
FF8MR12W2M1B11BOMA1
IR (Infineon Technologies) FF8MR12W2M1B11BOMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Same Series
FF8MR12W2M1B11BOMA1
FF8MR12W2M1B11BOMA1
MOSFET 2N-CH 1200V AG-EASY2BM-2
IR (Infineon Technologies)
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