EPC2110ENGRT

Manufacturer Part EPC2110ENGRT
Manufacturer EPC
Description GAN TRANS 2N-CH 120V BUMPED DIE
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet EPC2110ENGRT PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Nov 28 - Dec 02 2024
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Product Attributes
Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual) Common Source
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):120V
Current - Continuous Drain (Id) @ 25°C:3.4A
Rds On (Max) @ Id, Vgs:60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id:2.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:0.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:80pF @ 60V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:Die
Supplier Device Package:Die
More Information
EPC2110ENGRT
EPC2110ENGRT
EPC EPC2110ENGRT is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
EPC2110ENGRT PDF
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Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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