Manufacturer Part | EPC2110ENGRT |
---|---|
Manufacturer | EPC |
Description | GAN TRANS 2N-CH 120V BUMPED DIE |
Category | Discrete Semiconductor |
RoHS | Lead free / RoHS Compliant |
Warranty | 365 days |
Datasheet | EPC2110ENGRT PDF |
Availability | 0 pieces |
Shipped from | HK warehouse |
Expected Shipping | Nov 28 - Dec 02 2024 |
In Stock Min.: 1 Mult.: 1
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Type | Description |
---|---|
Series: | eGaN® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Common Source |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 120V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A |
Rds On (Max) @ Id, Vgs: | 60mOhm @ 4A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 80pF @ 60V |
Power - Max: | - |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
Payment method | Hand Fee |
Telegraphic Transfer | Request service |
Paypal | 4% fee |
Credit Card | 4% fee |
Western Union | Free of charge |
Money Gram | Free of charge |
Shipping Type | Lead Time |
DHL | 2-5 days |
Fedex | 2-5 days |
UPS | 2-5 days |
TNT | 2-6 days |
EMS | 3-7 days |
Registered Air Mail | 20-35 days |