BSC750N10NDGATMA1

Manufacturer Part BSC750N10NDGATMA1
Manufacturer Rochester Electronics
Description PFET, 3.2A I(D), 100V, 0.075OHM,
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet BSC750N10NDGATMA1 PDF
Availability 2624 pieces
Shipped from HK warehouse
Expected Shipping Nov 29 - Dec 03 2024
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Product Attributes
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:3.2A
Rds On (Max) @ Id, Vgs:75mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs:11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:720pF @ 50V
Power - Max:26W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4
More Information
BSC750N10NDGATMA1
BSC750N10NDGATMA1
Rochester Electronics BSC750N10NDGATMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
BSC750N10NDGATMA1 PDF
Same Series
BSC750N10NDGATMA1
BSC750N10NDGATMA1
PFET, 3.2A I(D), 100V, 0.075OHM,
Rochester Electronics
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DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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PFET, 3.2A I(D), 100V, 0.075OHM,

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