IRFHE4250DTRPBF

Manufacturer Part IRFHE4250DTRPBF
Manufacturer Rochester Electronics
Description HEXFET POWER MOSFET
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet IRFHE4250DTRPBF PDF
Availability 9000 pieces
Shipped from HK warehouse
Expected Shipping Nov 23 - Nov 27 2024
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Product Attributes
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:86A (Tc), 303A (Tc)
Rds On (Max) @ Id, Vgs:2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V
Vgs(th) (Max) @ Id:2.1V @ 35µA, 2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:20nC, 53nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1735pF @ 13V, 4765pF @ 13V
Power - Max:156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:32-PowerVFQFN
Supplier Device Package:32-PQFN (6x6)
More Information
IRFHE4250DTRPBF
IRFHE4250DTRPBF
Rochester Electronics IRFHE4250DTRPBF is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
IRFHE4250DTRPBF PDF
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Shipping
Shipping Type Lead Time
DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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