SIRB40DP-T1-GE3

Manufacturer Part SIRB40DP-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET 2 N-CH 40V POWERPAK SO8
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SIRB40DP-T1-GE3 PDF
Availability 3719 pieces
Shipped from HK warehouse
Expected Shipping Nov 26 - Nov 30 2024
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Product Attributes
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Rds On (Max) @ Id, Vgs:3.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:4290pF @ 20V
Power - Max:46.2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® SO-8 Dual
Supplier Device Package:PowerPAK® SO-8 Dual
More Information
SIRB40DP-T1-GE3
SIRB40DP-T1-GE3
Vishay / Siliconix SIRB40DP-T1-GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SIRB40DP-T1-GE3 PDF
Same Series
SIRB40DP-T1-GE3
SIRB40DP-T1-GE3
MOSFET 2 N-CH 40V POWERPAK SO8
Vishay / Siliconix
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