SQS966ENW-T1_GE3

Manufacturer Part SQS966ENW-T1_GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CHAN 60V
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet SQS966ENW-T1_GE3 PDF
Availability 725 pieces
Shipped from HK warehouse
Expected Shipping Nov 26 - Nov 30 2024
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In Stock Min.: 1 Mult.: 1

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Product Attributes
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Rds On (Max) @ Id, Vgs:36mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:572pF @ 25V
Power - Max:27.8W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:PowerPAK® 1212-8W Dual
Supplier Device Package:PowerPAK® 1212-8W Dual
More Information
SQS966ENW-T1_GE3
SQS966ENW-T1_GE3
Vishay / Siliconix SQS966ENW-T1_GE3 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
SQS966ENW-T1_GE3 PDF
Same Series
SQS966ENW-T1_GE3
SQS966ENW-T1_GE3
MOSFET N-CHAN 60V
Vishay / Siliconix
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DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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