ECH8601M-TL-H

Manufacturer Part ECH8601M-TL-H
Manufacturer Rochester Electronics
Description N-CHANNEL POWER MOSFET
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet ECH8601M-TL-H PDF
Availability 12705 pieces
Shipped from HK warehouse
Expected Shipping Nov 24 - Nov 28 2024
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Product Attributes
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss):24V
Current - Continuous Drain (Id) @ 25°C:8A (Ta)
Rds On (Max) @ Id, Vgs:23mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:-
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:8-ECH
More Information
ECH8601M-TL-H
ECH8601M-TL-H
Rochester Electronics ECH8601M-TL-H is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
ECH8601M-TL-H PDF
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DHL 2-5 days
Fedex 2-5 days
UPS 2-5 days
TNT 2-6 days
EMS 3-7 days
Registered Air Mail 20-35 days
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