FF23MR12W1M1B11BOMA1

Manufacturer Part FF23MR12W1M1B11BOMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET 2 N-CH 1200V 50A MODULE
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet FF23MR12W1M1B11BOMA1 PDF
Availability 0 pieces
Shipped from HK warehouse
Expected Shipping Dec 23 - Dec 27 2024
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Product Attributes
Type Description
Series:CoolSiC™+
Package:Tray
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:50A
Rds On (Max) @ Id, Vgs:23mOhm @ 50A, 15V
Vgs(th) (Max) @ Id:5.55V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:125nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:3950pF @ 800V
Power - Max:20mW
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
More Information
FF23MR12W1M1B11BOMA1
FF23MR12W1M1B11BOMA1
IR (Infineon Technologies) FF23MR12W1M1B11BOMA1 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
FF23MR12W1M1B11BOMA1 PDF
Same Series
FF23MR12W1M1B11BOMA1
FF23MR12W1M1B11BOMA1
MOSFET 2 N-CH 1200V 50A MODULE
IR (Infineon Technologies)
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