BSM300D12P2E001

Manufacturer Part BSM300D12P2E001
Manufacturer ROHM Semiconductor
Description MOSFET 2N-CH 1200V 300A
Category Discrete Semiconductor
RoHS Lead free / RoHS Compliant
Warranty 365 days
Datasheet BSM300D12P2E001 PDF
Availability 7 pieces
Shipped from HK warehouse
Expected Shipping Dec 23 - Dec 27 2024
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Product Attributes
Type Description
Series:-
Package:Tray
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:300A (Tc)
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:4V @ 68mA
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:35000pF @ 10V
Power - Max:1875W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
More Information
BSM300D12P2E001
BSM300D12P2E001
ROHM Semiconductor BSM300D12P2E001 is available at Ample-Chip.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Documents
Datasheet
BSM300D12P2E001 PDF
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